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1N5400G-1N5408G
Vishay Lite-On Power Semiconductor
3.0A Glass Passivated Rectifier
Features
D Glass passivated die construction D Diffused junction D High current capability and low forward
voltage drop
D Surge overload rating to 125A peak D Plastic material - UL Recognition flammability
classification 94V-0
14 423
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC Bl ki voltage DC Blocking lt Test Conditions Type 1N5400G 1N5401G 1N5402G 1N5403G 1N5404G 1N5405G 1N5406G 1N5407G 1N5408G Symbol VRRM =VRWM =VR V Value 50 100 200 300 400 500 600 800 1000 125 3 -65...+150 Unit V V V V V V V V V A A C
Peak forward surge current Average forward current TA=55C Junction and storage temperature range
IFSM IFAV Tj=Tstg
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Diode capacitance Thermal resistance junction to ambient Test Conditions IF=3A TA=25C TA=125C IF=0.5A, IR=1A, Irr=0.25A VR=4V, f=1MHz Type Symbol VF IR IR trr CD RthJA Min Typ Max 1.1 5 100 2 Unit V
mA mA ms
pF K/W
40 32
Rev. A2, 24-Jun-98
1 (4)
1N5400G-1N5408G
Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified)
IFAV - Average Forward Current ( A ) 4 C D - Diode Capacitance ( pF ) 200
Tj = 25C f = 1 MHz
3
100
2
1
Single phase half-wave 60 Hz resistive or inductive load
0 0
15566
10 150 175
15569
25
50
75
100 125
1
10 VR - Reverse Voltage ( V )
100
Tamb - Ambient Temperature ( C )
Figure 1. Max. Average Forward Current vs. Ambient Temperature
100
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
100 IR - Reverse Current ( m A )
IF - Forward Current ( A )
10
Tj = 125C
10
1.0
1.0
Tj = 25C
0.1
0.01 0.4
15567
0.1 0.6 0.8 1.0 1.2 1.4 1.6 VF - Forward Voltage ( V ) 1.8
15570
0
20
40
60
80
100
120 140
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Typ. Forward Current vs. Forward Voltage
IFSM - Peak Forward Surge Current ( A ) 200
Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage
8.3 ms Single Half-Sine-Wave JEDEC method
100
10 1 10 Number of Cycles at 60 Hz 100
15568
Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles
2 (4)
Rev. A2, 24-Jun-98
1N5400G-1N5408G
Vishay Lite-On Power Semiconductor Dimensions in mm
14445
Case: molded plastic Polarity: cathode band Approx. weight: 1.12 grams Mounting position: any Marking: type number
Rev. A2, 24-Jun-98
3 (4)
1N5400G-1N5408G
Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98

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